sot-23 plastic-encapsulate mosfets n-channel 20-v(d-s) mosfet feature trenchfet power mosfet applications z load switch for portable devices z dc/dc converter marking: s2 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 8 v continuous drain current i d 2.1 continuous source-drain current(diode conduction) i s 0.6 a power dissipation p d 0.35 w thermal resistance from junction to ambient ( t 5s) r ja 357 /w operating junction t j 150 storage temperature t stg -55 ~+150 so t -23 1. gate 2. source 3. drain 2012-10 willas electronic corp. SE2302 z
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-source breakdown voltage v (br)dss v gs = 0v, i d =10a 20 gate-threshold voltage v gs(th) v ds =v gs , i d =50a 0.65 0.95 1.2 v gate-body leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =20v, v gs =0v 1 a v gs =4.5v, i d =3.6a 0.045 0.060 drain-source on-resistance a r ds(on) v gs =2.5v, i d =3.1a 0.070 0.115 ? forward transconductance a g fs v ds =5v, i d =3.6a 8 s diode forward voltage v sd i s =0.94a,v gs =0v 0.76 1.2 v dynamic total gate charge q g 4.0 10 gate-source charge q gs 0.65 gate-drain charge q gd v ds =10v,v gs =4.5v,i d =3.6a 1.5 nc input capacitance b c iss 300 output capacitance b c oss 120 reverse transfer capacitance b c rss v ds =10v,v gs =0v,f=1mhz 80 pf switching b turn-on delay time t d (on) 7 15 rise time t r 55 80 turn-off delay time t d(off) 16 60 fall time t f v dd =10v, r l =5.5 ?, i d 3.6a, v gen =4.5v,rg=6 ? 10 25 ns notes : a. pulse test : pulse width 300s, duty cycle 2%. b. these parameters have no way to verify. 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2302
0 5 10 15 20 25 30 0 20 40 60 80 100 024681 0 0.00 0.04 0.08 0.12 0.16 0.20 0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 024681 0 0 3 6 9 12 15 typical characteristics r ds(on) i d t a =25 pulsed v gs =2.5v v gs =4.5v on-resistance r ds(on) (m ) drain current i d (a) t a =25 pulsed r ds(on) v gs i d =4.5a on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =25 pulsed transfer characteristics t a =25 pulsed gate to source voltage v gs (v) drain current i d (a) v gs =3.5v,3.0v,2.5v v gs =1.5v v gs =2.0v output characteristics drain to source voltage v ds (v) drain current i d (a) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2302
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2302
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